Toshiba Electronics Europe GmbH ("Toshiba") has introduced two new 150V N-channel power MOSFET products, the TPH1100CQ5 and TPH1400CQ5, which are based on their latest generation U-MOS X-H Trench process.  These devices are designed specifically for use in high-performance switching power supplies, such as those used in data centers, communication base stations, and other industrial applications.

The new products feature a maximum drain-source voltage (VDSS) rating of 150V and can handle drain currents (ID) of up to 49A (TPH1100CQ5) and 32A (TPH1400CQ5).  They have a maximum drain-source on-resistance (RDS(ON)) of 11mΩ and 14mΩ, respectively.

The key advantage of these new devices is their improved reverse recovery characteristics, which are critical in synchronous rectification applications.  In the case of the TPH1400CQ5, the reverse recovery charge (Qrr) is reduced by approximately 73% to 27nC (typ.), and the reverse recovery time (trr) of 36 ns (typ.) is approximately 45% faster compared to Toshiba's existing TPH1400CQH, which offers the same voltage and RDS(ON).  When used in synchronous rectification applications, the TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency.

The improved reverse recovery characteristics also help to reduce spike voltages generated during switching, improving the EMI characteristics of designs and reducing the need for external filtering.  The devices are housed in a versatile, surface-mount SOP Advance(N) package measuring just 4.9mm x 6.1mm x 1.0mm.

To support designers, Toshiba has developed both G0 and G2 SPICE models for the new devices.  The G0 SPICE model enables rapid verification of circuit function, while the highly accurate G2 SPICE models allow for precise reproduction of transient characteristics.

Shipments of the new TPH1100CQ5 and TPH1400CQ5 power MOSFET products have already begun, and Toshiba will continue to expand their lineup of power MOSFETs that help improve the efficiency of various equipment.